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strong ir fet? IRFH7787PBF 1 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 hexfet ? power mosfet application ?? brushed motor drive applications ?? bldc motor drive applications ?? battery powered circuits ?? half-bridge and full-bridge topologies ?? synchronous rectifier applications ?? resonant mode power supplies ?? or-ing and redundant power switches ?? dc/dc and ac/dc converters ?? dc/ac inverters benefits ?? improved gate, avalanche and dynamic dv/dt ruggedness ?? fully characterized capacitance and avalanche soa ?? enhanced body diode dv/dt and di/dt capability ?? lead-free, rohs compliant v dss 75v r ds(on) typ. 6.6m ?? max 8.0m ?? i d 68a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature base part number package type standard pack orderable part number form quantity IRFH7787PBF pqfn 5mm x 6mm tape and reel 4000 irfh7787trpbf ? pqfn 5 x 6 mm 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 6 8 10 12 14 16 18 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 41a t j = 25c t j = 125c 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a )
? IRFH7787PBF 2 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 68 a i d @ t c = 100c continuous drain current, v gs @ 10v 43 i dm pulsed drain current ?? 270 p d @t c = 25c maximum power dissipation 83 w linear derating factor 0.67 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 150 ? c ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ' v (br)dss / ' t j breakdown voltage temp. coefficient ??? 60 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 6.6 8.0 m : v gs = 10v, i d = 41a ? v gs(th) gate threshold voltage 2.1 ??? 3.7 v v ds = v gs , i d = 100a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =75 v, v gs = 0v ??? ??? 150 v ds =75v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.3 ??? : ??? 7.5 ??? v gs = 6.0v, i d = 21a ? notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 120h, r g = 50 : , i as = 41a, v gs =10v. ?? i sd d 41a, di/dt d 1140a/s, v dd d v (br)dss , t j d 175c. ?? pulse width d 400s; duty cycle d 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r t is measured at t j approximately 90c. ? limited by t jmax , starting t j =25c, l= 1mh, r g = 50 : , i as = 17a, v gs =10v. avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 100 mj e as (thermally limited) single pulse avalanche energy ?? 146 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r t jc (bottom) junction-to-case ? ??? 1.5 r t jc (top) junction-to-case ? ??? 21 c/w r t ja junction-to-ambient ??? 34 ? r t ja (<10s) junction-to-ambient ??? 22 ?
? IRFH7787PBF 3 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 110 ??? ??? s v ds = 10v, i d = 41a q g total gate charge ??? 75 110 i d = 41a q gs gate-to-source charge ??? 18 ??? v ds = 38v q gd gate-to-drain charge ??? 23 ??? v gs = 10v q sync total gate charge sync. (qg ? qgd) ??? 52 ??? t d(on) turn-on delay time ??? 7.3 ??? ns v dd = 38v t r rise time ??? 16 ??? i d = 41a t d(off) turn-off delay time ??? 53 ??? r g = 2.7 ?? t f fall time ??? 12 ??? v gs = 10v f c iss input capacitance ??? 4030 ??? pf ? v gs = 0v c oss output capacitance ??? 330 ??? v ds = 25v c rss reverse transfer capacitance ??? 200 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 290 ??? v gs = 0v, vds = 0v to 60v h c oss eff.(tr) output capacitance (time related) ??? 380 ??? v gs = 0v, vds = 0v to 60v g diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 68 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 270 integral reverse (body diode) c p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c,i s = 41a,v gs = 0v f dv/dt peak diode recovery dv/dt ??? 11 ??? v/ns t j = 150c,i s = 41a,v ds = 75v e t rr reverse recovery time ??? 29 ??? ns t j = 25c v dd = 64v ??? 34 ??? t j = 125c i f = 41a, q rr reverse recovery charge ??? 30 ??? nc t j = 25c di/dt = 100a/s f ??? 42 ??? t j = 125c ? i rrm reverse recovery current ??? 1.7 ??? a t j = 25c nc ? d s g
? IRFH7787PBF 4 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 0 102030405060708090100 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 41a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 41a v gs = 10v fig 6. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v ? 60s pulse width
? IRFH7787PBF 5 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc fig 10. maximum safe operating area -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 75 80 85 90 95 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 11. drain-to-source breakdown voltage 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 0 10 20 30 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v fig 13. typical on-resista nce vs. drain current 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 9. typical source-drain diode forward voltage -10 0 10 20 30 40 50 60 70 80 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 e n e r g y ( j ) fig 12. typical c oss stored energy
? IRFH7787PBF 6 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 41a fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart = 25c (single pulse)
? IRFH7787PBF 7 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 fig 21. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 250 300 q r r ( n c ) i f = 41a v r = 64v t j = 25c t j = 125c fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 14 i r r m ( a ) i f = 27a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 250 q r r ( n c ) i f = 27a v r = 64v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 14 i r r m ( a ) i f = 41a v r = 64v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature
? IRFH7787PBF 8 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? IRFH7787PBF 9 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "e" package details xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "e" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
? IRFH7787PBF 10 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 pqfn 5x6 outline "e" tape and reel reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 329.5 20.9 12.8 1.7 97 ref 13 code a b c d e f g max 330.5 21.5 13.5 2.3 99 17.4 14.5 min 12.972 0.823 0.504 0.067 3.819 0.512 max 13.011 0.846 0.532 0.091 3.898 0.571 metric imperial tr1 option (qty 400) imperial min 6.988 0.823 0.520 0.075 2.350 0.512 max 178.5 21.5 13.8 2.3 66 12 14.5 min 177.5 20.9 13.2 1.9 65 ref 13 metric max 7.028 0.846 0.543 0.091 2.598 0.571 note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? IRFH7787PBF 11 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes industrial (per jedec jesd47f ?? guidelines) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. revision history date comments 2/19/2015 ?? updated e as (l =1mh) = 146mj on page 2 ?? updated note 8 ?limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 17a, v gs =10v? on page 2

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